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onsemi NVMFS4C306N Power MOSFETs

2024-05-22

onsemi is helping build a better future by driving disruptive innovations. Focusing on automotive and industrial end-markets, this company is accelerating change in megatrends such as vehicle electrification and safety, industrial automation, sustainable energy grids, and 5G and cloud infrastructure. With their innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve complex challenges, and strives for a cleaner, safer, and smarter world. onsemi operates a responsive, reliable supply chain and quality programs, and robust ESG programs, and has a global network of manufacturing facilities, sales and marketing offices, and engineering centers in its key markets.

 

onsemi NVMFS4C306N Power MOSFETs

onsemi NVMFS4C306N Power MOSFETs offer 30V drain-to-source voltage, 3.4mΩ RDS(ON), and 71A continuous drain current. The automotive power MOSFET is available in a 5mm x 6mm flat lead SO8-FL package developed for compact and efficient designs.

The onsemi NVMFS4C306N Power MOSFETs have a wettable flank option available for enhanced optical inspection. The NVMFS4C306N is AEC-Q101-qualified and PPAP-capable, ideal for automotive applications.

FEATURES

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • AEC-Q101-qualified and PPAP-capable
  • NVMFS4C306NWF - wettable flanks option for enhanced optical inspection
  • Pb-free, Halogen-free/BFR-free, and RoHS-compliant

APPLICATIONS

  • Reverse battery protection
  • DC-DC converters output driver

SPECIFICATIONS

  • 71A maximum continuous drain current
  • 3.4mΩ at 10V and 4.8mΩ at 4.5V RDS(ON) maximum
  • 30V Drain-to-Source voltage
  • ±20V Gate-to-Source voltage
  • 166A pulsed drain current
  • -55°C to +175°C operating junction and storage temperature range

TYPICAL APPLICATION

Application Circuit Diagram - onsemi NVMFS4C306N Power MOSFETs
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