Nexperia eMode GaN FETs
Nexperia eMode GaN FETs offer a voltage range of 100V to 650V and superior switching performance. These FETs deliver fast transition and switching capability, excellent power efficiency, and low QC and QOSS values.Nexperia Low Voltage (< 200V) eMode GaN FETs deliver optimum flexibility in power systems. These devices offer superior switching performance due to very low QC and QOSS values. Enabling faster charging for e-mobility and wired / wireless changing systems as well as significant space and BOM savings in LiDAR and lower noise in Class D audio amplifiers.
View Nexperia Low Voltage (<200V) eMode GaN FETs
Nexperia High Voltage (200V-650V) eMode GaN FETs deliver optimum flexibility in power systems and are ideal for low-power 650V applications. Offering superior switching performance due to very low QC and QOSS values, these devices bring improved efficiency to 650V AC/DC and DC/AC power conversion. As well as bringing significant space and BOM savings in BLDC and micro servo motor drives or LED drivers.
View Nexperia High Voltage (200V-650V) eMode GaN FETs
FEATURES
- Enhancement mode - normally-off power switch
- Ultra high-frequency switching capability
- No body diode
- Low gate charge, low output charge
- Qualified for standard applications
- ESD protection
- Lead free, RoHS and REACH compliant
- High efficiency and high power density
APPLICATIONS
- High power density and high-efficiency power conversion
- AC-to-DC converters
- Fast battery charging, mobile phone, laptop, tablet, and USB Type-C™ chargers
- Datacom and telecom (AC-to-DC and DC-to-DC) converters
- Motor drives
- Class D audio amplifiers
